Study of Germanium/silicon Quantum Dots on Nanopatterns Made by a Self-assembled Diblock Copolymer

For the last decade, the subject of epitaxial self-assembly of semiconductor quantum dots (SAQDs) has been driven by the need of fundamental physics studies for low dimensional system and novel electronic and optoelectronic device applications. Considerable attention has been paid to Ge quantum dots (QDs) because of the possibility of various device applications and compatibility with a Si integrated circuit. Since QDs realized by using self-assembly in the Stranski-Kranstanov (SK) growth mode have shown formidable barriers such as large lateral size, low aerial dot density, irregular size, and randomness of position distributions, recently the research efforts have been focusing on the subject of QD formation on patterned substrate as templates (topography-guided assembly).