Oliver Ambacher

• AlGaN/GaN-Based Millimeter-Wave High Electron Mobility Transistors
• Development and Evaluation of a Gaas Based 300 GHz Module
• III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions
• Integrated Sub-Millimeter-Wave High-Power Amplifiers in Advanced InGaAs-Channel HEMT Technology
• Laser Systems, Part 3
• Monolithic Millimeter-Wave Integrated Circuits for Low-Power Wireless Communication Systems with High Data Rates
• Towards the Solid Protein Surface